Product Overview
Solid State MJ16018 Bipolar (BJT) Single Transistor, NPN, 800 V, 10 A, 175 W
The MJ16018 is a Silicon NPN Power Transistor designed for high voltage and high speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch mode applications.
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 800V
Collector Emitter Voltage Max: 800V
Continuous Collector Current: 10A
Power Dissipation Pd: 175W
Power Dissipation: 175W
DC Collector Current: 10A
DC Current Gain hFE: 4hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-3
No. of Pins: 3Pins
Operating Temperature Max: 200°C
New surplus. See photos for more details.
xxqxx13
The MJ16018 is a Silicon NPN Power Transistor designed for high voltage and high speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch mode applications.
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 800V
Collector Emitter Voltage Max: 800V
Continuous Collector Current: 10A
Power Dissipation Pd: 175W
Power Dissipation: 175W
DC Collector Current: 10A
DC Current Gain hFE: 4hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-3
No. of Pins: 3Pins
Operating Temperature Max: 200°C
New surplus. See photos for more details.
xxqxx13
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