Westinghouse Thyristor Semiconductor Device P/N 507C638H87

Westinghouse Thyristor Semiconductor Device P/N 507C638H87

Specifications:

Part: 507C638H87 / Alt. A1-58101 / Alt. WX809E87

NSN: 5961-00-068-9547

Manufacturer: Westinghouse Electric

Additional Information:

Inclosure Material: Metal

Overall Length: 1.125 inches nominal

Mounting Facility Quantity: 1

Internal Configuration: Junction contact

Joint Electronic Device Engineering Council/Jedec/Case Outline
Designation: TO-94

Mounting Method: Threaded stud

Features Provided: Hermetically sealed case

Overall Width Across Flats: 1.062 inches nominal

Nominal Thread Size: 0.500 inches

Semiconductor Material: Silicon

Voltage Rating IN Volts PER Characteristic: 250.0 maximum
repetitive peak off-state voltage and 300.0 maximum reverse voltage, peak

Current Rating PER Characteristic: 50.00 amperes source cutoff current preset

Special Features: Junction pattern arrangement: npnp

Thread Series Designator: UNF

Terminal Type AND Quantity: 1 solder stud and 2 uninsulated
wire lead

The thyristor is a four-layered, three terminal semiconductor device, with each layer consisting of alternately N-type or P-type material, for example P-N-P-N.

The main terminals, labelled anode and cathode, are across all four layers.

The control terminal, called the gate, is attached to p-type material near the cathode. (A variant called an SCS—Silicon Controlled Switch—brings all four layers out to terminals.)

The operation of a thyristor can be understood in terms of a pair of tightly coupled bipolar junction transistors, arranged to cause a self-latching action.

This item is new with original packaging only opened for photos. New Surplus. See photos for exact item.